哈尔滨一盛新材料科技有限公司

中文

Diamond/copper composite material

Material Introduction

The third-generation thermal control materials are mainly molybdenum/copper, with a thermal conductivity of only 200~300W/mk, which can no longer meet the thermal control needs during high-power periods. This material is a diamond/copper composite material made by combining diamond particles with copper, which has the highest thermal conductivity. Its thermal conductivity can reach 700-900W/mk, and it is called the fourth generation thermal control material. It is mainly used in integrated heat sinks and laser diode heat sinks, solid-state laser heat sinks, CPU heat sinks or heat sinks, IGBT substrates, LED and HB-LED heat sinks, RF and microwave packaging heat sinks, microelectronic packaging heat sinks, high thermal load electronic devices, etc. It is mainly applied in fields such as 6G communication, new energy vehicles, AI systems, and large computing power centers.

One time formed diamond/copper composite material heat dissipation shell, etc
Diamond/copper composite material thermal conductive carrier plate after surface coating
Diamond/copper composite thin plates, etc

Background

Heat dissipation is crucial: clean energy, 5G Internet of Things, and artificial intelligence are widely recognized social evolution directions today. In the process of realizing these visions, a massive number of scientific challenges need to be solved. Among them, thermal management is a common challenge faced by these three directions: in clean energy, wind turbines and photovoltaic inverters require temperature control, and the thermal management system in electric vehicles is even the core technology that determines car safety. The thermal issues of 5G base stations and terminal products directly affect the user experience and have become a key technical point emphasized by almost every merchant when promoting their products; Artificial intelligence requires huge computing power support, and the heat generation of components increases sharply. Indirect liquid cooling and even immersion cooling have been widely used in data centers. At the same time, with the advancement of technology and the development trend of high computing power, miniaturization, and integration of new generation equipment, the power consumption and heat flux density of devices have significantly increased. For every 10% increase in chip temperature, the chip life is reduced by half. The problem of heat dissipation has become increasingly severe. The requirements for device performance and reliability have quickly elevated the issue of temperature control from an almost negligible factor to a core challenge in product design.

Ultra high voltage transmission IGBT
IGBT for high-speed rail transit
IGBT for new energy vehicles
Server chip heat sink

Performance Parameter

	Density g/cm³	Specific heat J/(kg•K)	Thermal conductivity W/(m•K)	coefficient of linear expansion 10^-6m/K	bending strength MPa
DC700	5.26	441	650~750	6~7	350~400
DC800	5.28	440	750~850	6~7	350~400
DC900	5.39	437	850~950	6~7	350~400
Bake at 350 ℃/3 minutes for 5 rounds, thermal conductivity attenuation ≤ 3%
-1000 high and low temperature impacts at 55 ℃~+125 ℃, thermal conductivity attenuation ≤ 3%